Perturbation of Au-assisted planar GaAs nanowire growth by p-type dopant impurities
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منابع مشابه
Perturbation of Au-assisted planar GaAs nanowire growth by p-type dopant impurities
III-V compound semiconductor nanowires (NWs), with their direct bandgaps and high mobilities, have been shown to be promising materials for many applications including solar cells, light emitting diodes, transistors, and lasers. Self-aligned, twin-plane-defect free, planar GaAs NWs can be grown by metalorganic chemical vapor deposition (MOCVD) through the Au-assisted vapor-liquid-solid mechanis...
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2013
ISSN: 2159-3930
DOI: 10.1364/ome.3.001687